王燕
发布时间:2022-03-24    发布人:杨武   



姓 名:王燕

职 称:副教授

职 务:

所属系:电子科学与技术系

邮 箱:2022800032@hfut.edu.cn

电 话:

个人简介:

王燕,女,副教授,硕士生导师。2016年于中国科学技术大学取得博士学位,之后以博士后和副研究员身份受聘于深圳大学微纳光电子学研究院。曾任香港理工大学访问学者。20223月加入合肥工业大学澳门新葡萄新京威尼斯,聘为“黄山学者学术骨干”副教授。主要研究方向为高功能密度信息存储器件以及神经形态计算应用,迄今在电子学、材料学类期刊上发表SCI论文60余篇,SCI引用超过2800次,H因子28 (google scholar citation)。其中以第一/通讯作者发表在 Nature Communications, Advanced Materials (2 ), Advanced Functional Materials, Chemical Reviews, Nano Letter 等高水平学术期刊上共计18篇,其中4ESI 1%高被引论文,7篇被选作Advanced Materials (2) 等杂志的封面或卷首论文,最高单篇SCI引用次数超过440次。以主编身份编著英文专著《Perovskite Quantum Dots: Synthesis, Properties and Applications》。主持国家自然科学基金,广东省自然科学基金面上项目。长期担任 Applied Nanoscience, IEEE Transactions on Circuits and Systems I: Regular Paper 等期刊审稿人。担任Frontiers of Physics期刊青年编委,广东省基础与应用基础研究基金评审专家,浙江省自然科学基金评审专家。

研究方向:

1.高功能密度信息存储器件的制备与性能研究

2.基于新型神经形态器件的类脑计算与存内计算

3.新型类脑机器人的工艺设计与集成

科研项目:

1.国家自然科学基金青年基金:基于量子点异质结的光电编程突触晶体管的研制2022-2024年度,主持。
2.
广东省自然科学基金面上项目:钙钛矿量子点自组装异质结的光控阻变性能研究,2019-2022年度,主持。

研究生招生:

每年招收硕士生2-3人。希望招收具有电子信息、电子科学与技术、微电子科学与工程、集成电路与系统等专业背景的学生。特别是对可重构电路系统、数字信号处理和光电子器件与工艺系统集成有浓厚兴趣,有自驱力的学生。

本科生招生:

欢迎澳门新葡萄新京威尼斯集成电路与集成系统、微电子科学与工程、电子科学与技术专业的本科生参加智能系统工艺集成相关的大创实验。

代表成果(著作、论文、专利等,限10项):

1】著作

Ye Zhou,Yan Wang(主编), Perovskite Quantum Dots: Synthesis, Properties and Applications, Springer Nature Singapore Pte Ltd. 2020, ISBN978-981-15-6636-3

2】论文

1.Yan Wang, Yue Gong, Shengming Huang, Xuechao Xing, Ziyu Lv, Junjie Wang, Jiaqin Yang, Ye Zhou, Su-Ting Han*, “Memristor-based biomimetic compound eye for real-time collision detection”, Nat. Common., 2021, 12, 5979.

2.Yan Wang, Ziyu Lv, Qiufan Liao, Haiquan Shan, Jinrui Chen, Ye Zhou*, Li Zhou, Xiaoli Chen, Vellaisamy A. L. Roy*, Zhanpeng Wang, Zongxiang Xu, Yu-Jia Zeng, Su-Ting Han*, “Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching”, Adv. Mater., 2018, 30, 1800327. (ESI高被引文章)

3.Yan Wang, Ziyu Lv, Jinrui Chen, Zhanpeng Wang, Ye Zhou*, Li Zhou, Xiaoli Chen, Su-Ting Han*, “Photonic synapses based on inorganic perovskite quantum dots for neuromorphic computing”, Adv. Mater., 2018, 30, 1802883. (ESI高被引文章)

4.Yan Wang, Yue Gong, Lin Yang, Ziyu Xiong, Ziyu Lv, Xuechao Xing, Ye Zhou, Bing Zhang, Chenliang Su, Qiufan Liao, Su-Ting Han*, “MXene-ZnO memristor for multimodal in-sensor computing”, Adv. Funct. Mater., 2021, 2100144. (ESI高被引文章)

5.Ziyu Lv#, Yan Wang#(共同第一作者), Jinrui Chen, Junjie Wang, Ye Zhou*, Su-Ting Han*, “Semiconductor quantum dots for memories and neuromorphic computing systems”, Chem. Rev., 2020, 120, 9, 3941. (ESI高被引文章)

6.Yue Xing, Jiang-Xu Yang, Guagn-Yong Zou, Can Fu, Yan Pan, Yu-Tian Xiao, Jiang Wang, Yan Wang*(通讯作者), Lin-Bao Luo*, “Sensitive and broadband wavelength sensor based on two graphene/Si/graphene heterojunctions”, Adv. Opt. Mater., 2023, 2300407.

7.Zhanpeng Wang#, Yan Wang#(共同第一作者), Jinbo Yu, Jiaqin Yang, Ye Zhou*, Jingyu Mao, Ruopeng Wang, Xiaojin Zhao, Wenhan Zheng, Su-Ting Han*, “Type-I core–shell ZnSe/ZnS quantum dot-based resistive switching for implementing algorithm”, Nano Lett., 2020, 20, 5562.

8.Yan Wang, Qiufan Liao, Donghong She, Ziyu Lv, Yue Gong, Guanglong Ding, Wenbin Ye, Jinrui Chen, Ziyu Xiong, Guoping Wang, Ye Zhou*, Su-Ting Han*, “Modulation of binary neuroplasticity in a heterojunction-based ambipolar transistor”, ACS Appl. Mater. Inter., 2020, 12, 15370.

9.Zahir Muhammad, Yuliang Li, Ghulam Abbas, Muhammad Usman, Zhe Sun, Yue Zhang, Ziyu Lv, Yan Wang*(通讯作者), Weisheng Zhao*, “Temperature modulating Fermi level pinning in 2D GeSe for high‐performance transistor”, Adv. Electron. Mater., 2022, 2101112.

10.Zahir Muhammad, Yan Wang*(通讯作者), Yue Zhang*, Pierre Vallobra, Shouzhong Peng, Songyan Yu, Ziyu Lv, Houyi Cheng, Weisheng Zhao*, “Radiation‐tolerant electronic devices using wide bandgap semiconductors”, Adv. Mater. Technol., 2023, 8, 2200539.

11.Yue Gong#, Yan Wang#(共同第一作者), Ronghua Li, Jiaqin Yang, Ziyu Lv, Xuechao Xing, Qiufan Liao, Junjie Wang, Jinrui Chen, Ye Zhou*, Su-Ting Han*, “Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor”, J. Mater. Chem. C, 2020, 8, 2985.

12.Yan Wang, Jing Yang, Zhanpeng Wang, Jinrui Chen, Qing Yang*, Ziyu Lv, Ye Zhou*, Yongbiao Zhai, Zongxiao Li, Su-Ting Han*, “Near-infrared annihilation of conductive filaments in quasiplane MoSe2/Bi2Se3 nanosheets for mimicking heterosynaptic plasticity”, Small, 2019, 15, 1805431.

13.Yan Wang, Jing Yang, Wenbin Ye, Donghong She, Jinrui Chen, Ziyu Lv, Vellaisamy A. L. Roy*, Huilin Li, Kui Zhou, Qing Yang, Ye Zhou*, Su-Ting Han*, “Near-infrared-irradiation-mediated synaptic behavior from tunable charge-trapping dynamics”, Adv. Electron. Mater., 2019, 1900765.

14.Yan Wang, Ziyu Lv, Li Zhou, Xiaoli Chen, Jinrui Chen, Ye Zhou*, Vellaisamy A. L. Roy*, Su-Ting Han*, “Emerging perovksite materials towards high density data storage and artificial synapse”, J. Mater. Chem. C, 2018, 6, 1600.

15.Yan Wang, Yi Ren, Jingjing Luo, Qiaoyan Hao, Biao Li, Zhan Gao, Yiwei Hu, Dan Lin, Kaibin Tang*, “Preparation of ultrathin perovskite nanosheets by the exfoliation of H2CaTa2O7 for high-performance lead removal from water”, RSC Adv., 2016, 6, 113671.

16.Yan Wang, Qiaoyan Hao, Xiaona Li, Biao Li, Jingjing Luo, Yiwei Hu, Kaibin Tang*, “Preparation of a Li+ intercalated organic derivative of the Ruddlesden-Popper phase H2CaTa2O7”, J. Alloy. Compd., 2015, 645, 24.

17.Yan Wang, Xiaobo Zhu, Xiaona Li, Linlin Wang, Yongkun Wang, Qiaoyan Hao, Kaibin Tang*, “D-Glucopyranose-modified compound of Ruddlesden-Popper phases H2CaTa2O7: characterization and intercalation with Ag”, J. Mater. Chem. A, 2014, 2, 15590.

18.Yan Wang, Caihua Wang, Linlin Wang, Qiaoyan Hao, Xiaobo Zhu, Xiuhua Chen, Kaibin Tang*, “Preparation of interlayer surface tailored protonated double-layered perovskite H2CaTa2O7 with n-alcohols, and their photocatalytic activity”, RSC Adv., 2014, 4, 4047.

3】授权专利

1.一种具有三端电极结构的稳健型光电忆阻器。王燕、吕子玉、程厚义、汪建、赵巍胜。专利号:ZL202121236457.4

2.一种光控神经突触仿生电子器件及其制备方法。王燕、韩素婷、周晔、陈锦锐、王展鹏。专利号:ZL201810758762.6

3.一种多级阻变存储器及制备方法。周晔、韩素婷、王展鹏、王燕、陈锦锐。专利号:ZL201810786319.X

4. 一种多场调控忆阻器及其制备方法。王燕、吕子玉、吴鹏、许涌、赵巍胜。专利号:ZL202110120943.8

5.一种水平结构的忆阻器及均一性优化方法。王燕、吕子玉、洪宾、吴鹏、赵巍胜。专利号:ZL202110155752.5

6.一种由自组装异质结材料作为存储介质层构建的忆阻器及其制备方法。王燕、吕子玉、程厚义、张悦、赵巍胜。专利号:ZL202110608381.1

7.一种具有三端电极结构的稳健型光电忆阻器。王燕、吕子玉、程厚义、汪健、赵巍胜。专利号:ZL202121236457.4

个人(实验室)主页:

http://optoele.hfut.edu.cn/



0551-62919106

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